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| QS043-402-20383 (2/5 36 140 130 110 43.8 10 13.8 11.5 4 - O6.5 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 1 3-M8 7 6 2 3 5 65 5(E1) 4(G1) 4 4-M4 LABEL 4 24 35 14.5 40 110 130 14.5 20.5 10 Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange , . (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal .. . (kgfcm) ise urn-on all urn-off ime ime ime ime = 1200V,= 0V = 20V,= 0V = 600A,= 15V = 5V,= 600mA = 10V,= 0V,= 1MH = 600V L= 1.0 G= 2.7 = 15V . . . . 37,800 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime . . . . . . . = 600A,= 0V = 600A,= -10V i/t= 1200A/s hermal mpedance iode th(j-c) Junction to Case . . . . . QS043-402-20383 (3/5 Fig.1- Output Characteristics (Typical) 1200 Fig.2- Output Characteristics (Typical) TC=25C 1200 TC=125C VGE=20V 12V 11V VGE=20V 1000 12V 11V 1000 15V 15V Collector Current I C (A) 800 10V Collector Current I C (A) 800 10V 600 600 9V 400 9V 400 8V 7V 8V 200 200 7V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=300A 600A 1200A IC=300A 1200A Collector to Emitter Voltage V CE (V) 600A 12 10 8 6 4 2 0 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 14 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 300000 100000 RL=1.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 600 500 400 300 200 100 0 0 12 10 8 6 4 2 0 5000 Capacitance C (pF) 30000 10000 VCE=600V 400V 200V Coes 3000 1000 Cres 300 100 1000 2000 3000 4000 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) QS043-402-20383 (4/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 5 3 1.6 VCC=600V RG=2.7 VGE=15V TC=25C Resistive Load VCC=600V IC=600A VGE=15V TC=25C Resistive Load toff ton Switching Time t (s) Switching Time t (s) tOFF 1.2 1 0.3 0.8 tf tON tr(V CE) 0 100 200 300 400 500 600 tf tr(V CE) 0.4 0.1 0 0.03 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 10 Fig.10- Series Gate Impedance vs. Switching Time VCC=600V IC=600A VGE=15V TC=125C Inductive Load toff ton 3 Switching Time t (s) 1 Switching Time t (s) tOFF tf 0.3 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 5 2 1 0.5 tON 0.1 tr(Ic) 0.2 0.1 tf tr(IC ) 0.03 0.05 0.01 0 200 400 600 800 0.02 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 250 1000 Fig.12- Series Gate Impedance vs. Switching Loss VCC=600V IC=600A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 200 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 300 EON EOFF 150 EON 100 100 EOFF ERR ERR 30 50 0 0 200 400 600 800 1000 10 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) QS043-402-20383 (5/5 1200 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 1000 TC=25C TC=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=600A TC=25C TC=125C trr Forward Current I F (A) 800 300 600 IRrM 100 400 200 0 0 1 2 3 4 30 0 600 1200 1800 2400 3000 3600 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 1000 300 RG=2.7 , VGE=15V, TC=125C Collector Current I C (A) 100 30 10 3 1 0.3 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) 3x10 -1 Fig.16- Transient Thermal Impedance Transient Thermal Impedance Rth (J-C) (C/W) 1x10 -1 FRD IGBT 3x10 -2 1x10 -2 3x10 -3 1x10 -3 TC=25C 1 Shot Pulse 3x10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) |
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